050-7239 rev b 3-2006 final data sheet with mos 7 format c po we r se mi co nd uc to rs o o l mo s to-247 d 3 pak g d s (s) (b) 6 0 0 v 60 a 0. 0 45 ? APT60N60BCS apt60n60scs apt60 n60bcs g* apt60 n60scs g* *g denotes rohs compliant, pb free terminal finish. ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? popular to-247 or surface mount d 3 package super junction mosfet maximum ratings all ratings: t c = 25c unless otherwise speci?ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 4 (v gs = 10v, i d = 44a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 3m a) symbol v dss i d i dm v gs p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage continuous total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. mosfet dv/dt ruggedness (v ds = 480v) avalanche current 2 repetitive avalanche energy 2 single pul se av al a nche energy 3 unit volts amps volts watts w/c c v/ns amps mj static electrical characteristics symbol v (br)dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts apt60n60b_scs(g) 600 60 38 230 30 431 3.45 -55 to 150 260 50 11 3 1950 min typ max 600 0.045 25 250 100 2.1 3 3.9 apt w ebsite - http://www .a dv ancedpo we r. com "coolmos? comprise a new family of transistors developed by in?neon technologies ag. "coolmos" is a trade - mark of in?neon technologies ag."
050-7239 rev b 3-2006 single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 d = 0.9 0.05 final data sheet with mos 7 format peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : apt reserves the right to change, without notice, the speci?cations and information contained herein. dynamic characteristics apt60n60b_scs(g) symbol r jc r ja min typ max 0.29 62 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f 3 starting t j = +25c, l = 33.23mh, r g = 25 ? , peak i l = 11a 4 pulse test: pulse width < 380s, duty cycle < 2% symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 5 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 44a @ 25c resistive switching v gs = 15v v dd = 400v i d = 44a @ 25c r g = 3.3 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 44a, r g = 4.3 ? inductive switching @ 125c v dd = 400v, v gs = 15v i d = 44a, r g = 4.3 ? 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. see ?gures 18, 20. 7 we do not recommend using this coolmos? product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. the current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. min typ max 7200 8500 290 150 190 34 50 30 20 100 10 675 520 1100 635 unit pf nc ns j source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 4 (v gs = 0v, i s = - 44a ) reverse recovery time (i s = - 44a , dl s /dt = 100a/s) reverse recovery charge (i s = - 44a , dl s /dt = 100a/s) peak diode recovery dv / dt 7 unit amps volts ns c v/ns min typ max 44 180 1.2 600 17 4 symbol i s i sm v sd t rr q rr dv / dt thermal characteristics
050-7239 rev b 3-2006 typical performance curves apt60n60b_scs(g) scope pics are placed with the place command and then scaled to 50% scope pics are placed with the place command and then scaled to 50% 5v 5.5v 6.5v 15, 10 & 7v 140 120 100 80 60 40 20 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 v ds > i d(on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j = -55c t j = +25c t j = +125c normalized to v gs = 10v @ 44a v gs =10v v gs =20v 200 180 160 140 120 100 80 60 40 20 0 60 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0 i d = 44a v gs = 10v 4.5v 6v 0.143 0.233 0.00391 0.00717 0.120 0.680 powe r (watts ) junctio n temp. ( c) rc mode l case temperature. ( c)
050-7239 rev b 3-2006 apt60n60b_scs(g) scope pics are placed with the place command and then scaled to 50% scope pics are placed with the place command and then scaled to 50% t c =+25c t j =+150c single pulse operation here limited by r ds (on) c rss c iss c oss v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 230 100 50 10 5 1 16 14 12 10 8 6 4 2 0 10 5 10 4 10 3 10 2 10 1 10 0 200 100 10 1 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage 100s 1ms 10ms switching energy (j) t d(on) and t d(off) (ns) switching energy (j) t r and t f (ns) e on e off i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resist ance t j =+150c t j =+25c i d = 44a t d(on) t d(off) v dd = 400v r g = 4.3 ? t j = 125 c l = 100 h v dd = 400v r g = 4.3 ? t j = 125 c l = 100 h e on includes diode reverse recovery. v dd = 400v r g = 4.3 ? t j = 125 c l = 100 h t r t f 0 20 40 60 80 0 20 40 60 80 0 20 40 60 80 0 5 10 15 20 25 30 35 40 45 50 1 10 100 600 0 50 100 150 200 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v ds =300v v ds =120v v ds =480v 250 200 150 100 50 0 2000 1500 1000 500 0 e on e off 110 100 90 80 70 60 50 40 30 20 10 0 2500 2000 1500 1000 500 0 v dd = 400v i d = 44a t j = 125 c l = 100 h e on includes diode reverse recovery.
050-7239 rev b 3-2006 typical performance curves apt60n60b_scs(g) scope pics are placed with the place command and then scaled to 50% figure 19, turn-off switching waveforms and de?nitions figure 18, turn-on switching waveforms and de?nitions drain current drain voltage gate voltage t j 125c 10% t d(on) 90% 5% t r 10% apt60dq60 i d v ds d.u.t. v dd g figure 20, inductive switching test circui t t j 125c 10% 0 t d(off) t f switching energy 90% 90% drain voltage gate voltage drain current switching energy to - 247 package outlin e d 3 pak package outlin e e3 e1 sac: tin, silver, copper 100% sn 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drai n drai n source gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drai n (heat sink) 1.98 (.078) 2.08 (.082) gate drai n source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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